No | Part number | Description ( Function ) | Manufacturers | |
6 | K6F1616T6B | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM K6F1616T6B Family Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial draft Revised - Changed Isb1(max.) from 25uA to 15uA Finalized - Added Package Type ’48-TBGA - 7.00x7.00’ Draft Date May 21, 2003 June 17, 2003 Remark Preliminary Preliminary 1.0 August 13, 2003 Final The at |
Samsung semiconductor |
|
5 | K6F1616T6B-EF55 | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM K6F1616T6B Family Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial draft Revised - Changed Isb1(max.) from 25uA to 15uA Finalized - Added Package Type ’48-TBGA - 7.00x7.00’ Draft Date May 21, 2003 June 17, 2003 Remark Preliminary Preliminary 1.0 August 13, 2003 Final The at |
Samsung semiconductor |
|
4 | K6F1616T6B-EF70 | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM K6F1616T6B Family Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial draft Revised - Changed Isb1(max.) from 25uA to 15uA Finalized - Added Package Type ’48-TBGA - 7.00x7.00’ Draft Date May 21, 2003 June 17, 2003 Remark Preliminary Preliminary 1.0 August 13, 2003 Final The at |
Samsung semiconductor |
|
3 | K6F1616T6B-F | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM K6F1616T6B Family Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial draft Revised - Changed Isb1(max.) from 25uA to 15uA Finalized - Added Package Type ’48-TBGA - 7.00x7.00’ Draft Date May 21, 2003 June 17, 2003 Remark Preliminary Preliminary 1.0 August 13, 2003 Final The at |
Samsung semiconductor |
|
2 | K6F1616T6B-TF55 | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM K6F1616T6B Family Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial draft Revised - Changed Isb1(max.) from 25uA to 15uA Finalized - Added Package Type ’48-TBGA - 7.00x7.00’ Draft Date May 21, 2003 June 17, 2003 Remark Preliminary Preliminary 1.0 August 13, 2003 Final The at |
Samsung semiconductor |
|
1 | K6F1616T6B-TF70 | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM K6F1616T6B Family Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial draft Revised - Changed Isb1(max.) from 25uA to 15uA Finalized - Added Package Type ’48-TBGA - 7.00x7.00’ Draft Date May 21, 2003 June 17, 2003 Remark Preliminary Preliminary 1.0 August 13, 2003 Final The at |
Samsung semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |