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K4X56163PE-LFG PDF Datasheet

The K4X56163PE-LFG is 16m X16 Mobile Ddr Sdram. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 K4X56163PE-LFG
16M x16 Mobile DDR SDRAM

K4X56163PE-L(F)G 16M x16 Mobile DDR SDRAM FEATURES Mobile-DDR SDRAM • 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS Latency ( 3 ) - Burst Length ( 2, 4, 8 ) - Burst Type (

Samsung semiconductor
Samsung semiconductor
pdf

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Recommended search results related to K4X56163PE-LFG

Part No Description ( Function) Manufacturers PDF
K4X56163PE   16M x16 Mobile DDR SDRAM

K4X56163PE-L(F)G 16M x16 Mobile DDR SDRAM FEATURES Mobile-DDR SDRAM • 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK)

Samsung semiconductor
Samsung semiconductor
datasheet pdf
K4X56163PE-LG   16M x16 Mobile DDR SDRAM

K4X56163PE-L(F)G 16M x16 Mobile DDR SDRAM FEATURES Mobile-DDR SDRAM • 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK)

Samsung semiconductor
Samsung semiconductor
datasheet pdf
K4X56163PG-FE   16M x16 Mobile-DDR SDRAM

K4X56163PG - L(F)E/G 16M x16 Mobile-DDR SDRAM FEATURES Mobile-DDR SDRAM • 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and C

Samsung semiconductor
Samsung semiconductor
datasheet pdf
K4X56163PG-FG   16M x16 Mobile-DDR SDRAM

K4X56163PG - L(F)E/G 16M x16 Mobile-DDR SDRAM FEATURES Mobile-DDR SDRAM • 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and C

Samsung semiconductor
Samsung semiconductor
datasheet pdf
K4X56163PG-LE   16M x16 Mobile-DDR SDRAM

K4X56163PG - L(F)E/G 16M x16 Mobile-DDR SDRAM FEATURES Mobile-DDR SDRAM • 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and C

Samsung semiconductor
Samsung semiconductor
datasheet pdf

[1]    

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Part Number Function Manufacturers PDF
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The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

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