No | Part number | Description ( Function ) | Manufacturers | |
1 | K4X1G163PE-FGC6 | 64Mx16 Mobile DDR SDRAM K4X1G163PE - FGC6(8) Mobile DDR SDRAM 64Mx16 Mobile DDR SDRAM (VDD/VDDQ 1.8V/1.8V) -1- Revision 1.1 February 2009 Free Datasheet http://www.0PDF.com K4X1G163PE - FGC6(8) Document Title 64Mx16 Mobile DDR SDRAM (VDD/VDDQ 1.8V/1.8V) Mobile DDR SDRAM Revision History Revision No. 0.0 1.0 History - First version for target specification. - Final Datasheet. - Updated DC chara |
Samsung |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to K4X1G163PE-FGC6 |
Part No | Description ( Function) | Manufacturers | |
K4X1G163PE-FGC8 | 64Mx16 Mobile DDR SDRAM K4X1G163PE - FGC6(8) Mobile DDR SDRAM 64Mx16 Mobile DDR SDRAM (VDD/VDDQ 1.8V/1.8V) -1- Revision 1.1 February 2009 Free Datasheet http://www.0PDF.com K4X1G163PE - FGC6(8) Document Title 64Mx16 Mobile DDR SDRAM (VDD/VDDQ 1.8V/1.8V) Mobile DDR SDRAM Revision History Revision |
Samsung |
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Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |