No | Part number | Description ( Function ) | Manufacturers | |
1 | K4S643233H-FN | Mobile-SDRAM K4S643233H - F(H)E/N/G/C/L/F 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. |
Samsung semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to K4S643233H-FN |
Part No | Description ( Function) | Manufacturers | |
K4S643233F-SDE | 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM K4S643233F-S(D)E/N/I/P CMOS SDRAM 2Mx32 Mobile SDRAM 90FBGA (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.5 December 2002 Rev. 1.5 Dec. 2002 K4S643233F-S(D)E/N/I/P 512K x 32Bit x 4 Banks SDRAM FEATURES • • • • 3.0V & 3.3 power |
Samsung semiconductor |
|
K4S643233F-SDI | 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM K4S643233F-S(D)E/N/I/P CMOS SDRAM 2Mx32 Mobile SDRAM 90FBGA (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.5 December 2002 Rev. 1.5 Dec. 2002 K4S643233F-S(D)E/N/I/P 512K x 32Bit x 4 Banks SDRAM FEATURES • • • • 3.0V & 3.3 power |
Samsung semiconductor |
|
K4S643233F-SDN | 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM K4S643233F-S(D)E/N/I/P CMOS SDRAM 2Mx32 Mobile SDRAM 90FBGA (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.5 December 2002 Rev. 1.5 Dec. 2002 K4S643233F-S(D)E/N/I/P 512K x 32Bit x 4 Banks SDRAM FEATURES • • • • 3.0V & 3.3 power |
Samsung semiconductor |
|
K4S643233F-SDP | 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM K4S643233F-S(D)E/N/I/P CMOS SDRAM 2Mx32 Mobile SDRAM 90FBGA (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.5 December 2002 Rev. 1.5 Dec. 2002 K4S643233F-S(D)E/N/I/P 512K x 32Bit x 4 Banks SDRAM FEATURES • • • • 3.0V & 3.3 power |
Samsung semiconductor |
|
K4S643233F-SE | 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM K4S643233F-S(D)E/N/I/P CMOS SDRAM 2Mx32 Mobile SDRAM 90FBGA (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.5 December 2002 Rev. 1.5 Dec. 2002 K4S643233F-S(D)E/N/I/P 512K x 32Bit x 4 Banks SDRAM FEATURES • • • • 3.0V & 3.3 power |
Samsung semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |