No | Part number | Description ( Function ) | Manufacturers | |
1 | K4S64163LH-RBF | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA K4S64163LH - R(B)E/N/G/C/L/F 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 2.5V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All |
Samsung semiconductor |
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Recommended search results related to K4S64163LH-RBF |
Part No | Description ( Function) | Manufacturers | |
K4S641632C | 1M x 16Bit x 4 Banks Synchronous DRAM K4S641632C 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES • • • • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst t |
Samsung semiconductor |
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K4S641632D | 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL K4S641632D CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 June 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.3 June 2000 K4S641632D Revision History Revision 0.1 (May 2000) • Chan |
Samsung semiconductor |
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K4S641632E | 64Mbit SDRAM K4S641632E CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.2 Sept. 2001 K4S641632E 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES |
Samsung semiconductor |
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K4S641632F | 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL K4S641632F CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S641632F Revision History Revision 0.0 (June, 2001) Revis |
Samsung semiconductor |
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K4S641632F-TC1H | 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL K4S641632F CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S641632F Revision History Revision 0.0 (June, 2001) Revis |
Samsung semiconductor |
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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