No | Part number | Description ( Function ) | Manufacturers | |
1 | K4S56163LF-XZG | 4M x 16Bit x 4 Banks Mobile SDRAM K4S56163LF - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 2.5V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All i |
Samsung semiconductor |
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Part No | Description ( Function) | Manufacturers | |
K4S561632A | 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL K4S561632A CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Sep. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Sep. 1999 K4S561632A 4M x 16Bit x 4 Banks Synchronous DRAM FEATURES |
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K4S561632C | 256Mbit SDRAM K4S561632C CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.4 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.4 Sept. 2001 DataSheet 4 U .com www.DataSheet4U. |
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K4S561632D | 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL K4S561632D CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL datasheet39.comom DataShee Revision 0.1 Aug. 2002 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Aug. 2002 DataSheet4U. |
Samsung semiconductor |
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K4S561632E | 256Mb E-die SDRAM Specification SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification Revision 1.3 September. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.3 September. 2003 SDRAM 256Mb E-die (x4, x8, x16) Revision History Rev |
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
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