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K4S56163LF-XZG PDF Datasheet

The K4S56163LF-XZG is 4m X 16bit X 4 Banks Mobile Sdram. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 K4S56163LF-XZG
4M x 16Bit x 4 Banks Mobile SDRAM

K4S56163LF - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 2.5V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All i

Samsung semiconductor
Samsung semiconductor
pdf

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Recommended search results related to K4S56163LF-XZG

Part No Description ( Function) Manufacturers PDF
K4S561632A   256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL

K4S561632A CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Sep. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Sep. 1999 K4S561632A 4M x 16Bit x 4 Banks Synchronous DRAM FEATURES

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K4S561632B   256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL

K4S561632B CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 May. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 May.2000 K4S561632B CMOS SDRAM Revision 0.1 (March 10, 2000) • �

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K4S561632C   256Mbit SDRAM

K4S561632C CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.4 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.4 Sept. 2001 DataSheet 4 U .com www.DataSheet4U.

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K4S561632D   256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL

K4S561632D CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL datasheet39.comom DataShee Revision 0.1 Aug. 2002 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Aug. 2002 DataSheet4U.

Samsung semiconductor
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K4S561632E   256Mb E-die SDRAM Specification

SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification Revision 1.3 September. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.3 September. 2003 SDRAM 256Mb E-die (x4, x8, x16) Revision History Rev

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