Datasheet K4S561632J Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	K4S561632J	256Mb J-die SDRAM Specification K4S560432J K4S560832J K4S561632J Synchronous DRAM 256Mb J-die SDRAM Specification 54 TSOP-II with Lead-Free & Halogen-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUE	Samsung semiconductor	data

K4S Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	K4S160822D	2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL K4S160822D CMOS SDRAM 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL Revision 1.0 October 1999 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.0 (Oct. 1999) K4S160822D Revision History Revision 1.0 (October 1999) CMOS SDRAM -2- R	Samsung semiconductor	data
2	K4S161622D	512K x 16Bit x 2 Banks Synchronous DRAM K4S161622D 512K x 16Bit x 2 Banks Synchronous DRAM FEATURES • • • • 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) Al	Samsung semiconductor	data
3	K4S161622E	1M x 16 SDRAM K4S161622E CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.1 Jan 2003 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.1 Jan '03 K4S161622E 512K x 16Bit x 2 Banks Synchronous DRAM FEATURES • • • • 3.3V po	Samsung semiconductor	data
4	K4S161622E-TC10	1M x 16 SDRAM K4S161622E CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.1 Jan 2003 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.1 Jan '03 K4S161622E 512K x 16Bit x 2 Banks Synchronous DRAM FEATURES • • • • 3.3V po	Samsung semiconductor	data
5	K4S161622E-TC55	1M x 16 SDRAM K4S161622E CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.1 Jan 2003 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.1 Jan '03 K4S161622E 512K x 16Bit x 2 Banks Synchronous DRAM FEATURES • • • • 3.3V po	Samsung semiconductor	data
6	K4S161622E-TC60	1M x 16 SDRAM K4S161622E CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.1 Jan 2003 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.1 Jan '03 K4S161622E 512K x 16Bit x 2 Banks Synchronous DRAM FEATURES • • • • 3.3V po	Samsung semiconductor	data
7	K4S161622E-TC70	1M x 16 SDRAM K4S161622E CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.1 Jan 2003 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.1 Jan '03 K4S161622E 512K x 16Bit x 2 Banks Synchronous DRAM FEATURES • • • • 3.3V po	Samsung semiconductor	data

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Número de pieza	Descripción	Fabricantes	PDF
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