Datasheet K4S560832J Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	K4S560832J	256Mb J-die SDRAM Specification K4S560432J K4S560832J K4S561632J Synchronous DRAM 256Mb J-die SDRAM Specification 54 TSOP-II with Lead-Free & Halogen-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUE	Samsung semiconductor

K4S5608 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
K4S560832E-TC75	256Mb E-die SDRAM Specification SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification Revision 1.3 September. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.3 September. 2003 SDRAM 256Mb E-die (x4, x8, x16) Revision History Rev	Samsung semiconductor
K4S560832E-NC75	SDRAM 256Mb E-die SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification 54pin sTSOP-II Revision 1.0 August. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 August, 2003 SDRAM 256Mb E-die (x4, x8, x16) Revision Hist	Samsung semiconductor
K4S560832D	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL K4S560832D CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 1.1 May. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 May. 2003 K4S560832D Revision History Revision 0.0 (Jan. , 2002) - Fir	Samsung semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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