No | Part number | Description ( Function ) | Manufacturers | |
1 | K4S560832D | 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL K4S560832D CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 1.1 May. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 May. 2003 K4S560832D Revision History Revision 0.0 (Jan. , 2002) - First release CMOS SDRAM Revision 0.1(May., 2003) - ICC6 of Low power is changed from 1.0 to 1.5 due |
Samsung semiconductor |
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Recommended search results related to K4S560832D |
Part No | Description ( Function) | Manufacturers | |
K4S560832A | 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL K4S560832A CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Sep. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Sep. 1999 K4S560832A 8M x 8Bit x 4 Banks Synchronous DRAM FEATURES � |
Samsung semiconductor |
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K4S560832B | 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL K4S560832B CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 May. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 May.2000 K4S560832B CMOS SDRAM Revision 0.1 (March 10, 2000) • � |
Samsung semiconductor |
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K4S560832C | 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL K4S560832C CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept. 2001 K4S560832C Revision History Revision 0.0 (Mar. 06, 2001) R |
Samsung semiconductor |
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K4S560832E-NC75 | SDRAM 256Mb E-die SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification 54pin sTSOP-II Revision 1.0 August. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 August, 2003 SDRAM 256Mb E-die (x4, x8, x16) Revision Hist |
Samsung semiconductor |
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K4S560832E-NCL75 | SDRAM 256Mb E-die SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification 54pin sTSOP-II Revision 1.0 August. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 August, 2003 SDRAM 256Mb E-die (x4, x8, x16) Revision Hi |
Samsung semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |