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K4S51153LF PDF Datasheet

The K4S51153LF is 8m X 16bit X 4 Banks Mobile Sdram In 54fbga. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 K4S51153LF
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4S51153LF - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs

Samsung semiconductor
Samsung semiconductor
pdf

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Recommended search results related to K4S51153LF

Part No Description ( Function) Manufacturers PDF
K4S511533F-YC   8M x 16Bit x 4 Banks Mobile SDRAM

K4S511533F - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Fu

Samsung semiconductor
Samsung semiconductor
datasheet pdf
K4S511533F-YF   8M x 16Bit x 4 Banks Mobile SDRAM

K4S511533F - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Fu

Samsung semiconductor
Samsung semiconductor
datasheet pdf
K4S511533F-YL   8M x 16Bit x 4 Banks Mobile SDRAM

K4S511533F - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Fu

Samsung semiconductor
Samsung semiconductor
datasheet pdf
K4S511533F-YPC   8M x 16Bit x 4 Banks Mobile SDRAM

K4S511533F - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Fu

Samsung semiconductor
Samsung semiconductor
datasheet pdf
K4S511533F-YPF   8M x 16Bit x 4 Banks Mobile SDRAM

K4S511533F - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Fu

Samsung semiconductor
Samsung semiconductor
datasheet pdf

[1]    

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