No | Part number | Description ( Function ) | Manufacturers | |
1 | K4S511533F-YPF | 8M x 16Bit x 4 Banks Mobile SDRAM K4S511533F - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All |
Samsung semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to K4S511533F-YPF |
Part No | Description ( Function) | Manufacturers | |
K4S511533F-YC | 8M x 16Bit x 4 Banks Mobile SDRAM K4S511533F - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Fu |
Samsung semiconductor |
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K4S511533F-YF | 8M x 16Bit x 4 Banks Mobile SDRAM K4S511533F - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Fu |
Samsung semiconductor |
|
K4S511533F-YL | 8M x 16Bit x 4 Banks Mobile SDRAM K4S511533F - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Fu |
Samsung semiconductor |
|
K4S511533F-YPC | 8M x 16Bit x 4 Banks Mobile SDRAM K4S511533F - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Fu |
Samsung semiconductor |
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K4S511533F-YPL | 8M x 16Bit x 4 Banks Mobile SDRAM K4S511533F - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Fu |
Samsung semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |