No | Part number | Description ( Function ) | Manufacturers | |
18 | K4S281632D | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL K4S281632D CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept. 2001 K4S281632D Revision History Revision 0.0 (Mar. 06, 2001) Revision 0.1 (Sep. 06, 2001) • • CMOS SDRAM Redefined IDD1 & IDD4 in DC Characteristics Changed th |
Samsung semiconductor |
|
17 | K4S281632D-L1H | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL K4S281632D CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept. 2001 K4S281632D Revision History Revision 0.0 (Mar. 06, 2001) Revision 0.1 (Sep. 06, 2001) • • CMOS SDRAM Redefined IDD1 & IDD4 in DC Characteristics Changed th |
Samsung semiconductor |
|
16 | K4S281632D-L1L | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL K4S281632D CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept. 2001 K4S281632D Revision History Revision 0.0 (Mar. 06, 2001) Revision 0.1 (Sep. 06, 2001) • • CMOS SDRAM Redefined IDD1 & IDD4 in DC Characteristics Changed th |
Samsung semiconductor |
|
15 | K4S281632D-L55 | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL K4S281632D CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept. 2001 K4S281632D Revision History Revision 0.0 (Mar. 06, 2001) Revision 0.1 (Sep. 06, 2001) • • CMOS SDRAM Redefined IDD1 & IDD4 in DC Characteristics Changed th |
Samsung semiconductor |
|
14 | K4S281632D-L60 | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL K4S281632D CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept. 2001 K4S281632D Revision History Revision 0.0 (Mar. 06, 2001) Revision 0.1 (Sep. 06, 2001) • • CMOS SDRAM Redefined IDD1 & IDD4 in DC Characteristics Changed th |
Samsung semiconductor |
|
13 | K4S281632D-L75 | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL K4S281632D CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept. 2001 K4S281632D Revision History Revision 0.0 (Mar. 06, 2001) Revision 0.1 (Sep. 06, 2001) • • CMOS SDRAM Redefined IDD1 & IDD4 in DC Characteristics Changed th |
Samsung semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |