No | Part number | Description ( Function ) | Manufacturers | |
1 | K4S281632B-N | 2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP shrink-TSOP K4S281632B-N 2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP FEATURES • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs - CAS latency (2 & 3) - Burst length (1, 2, 4, 8 & Full page) - Burst type (Sequential & Interleave) • All inputs are sampled at the positive going e |
Samsung semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to K4S281632B-N |
Part No | Description ( Function) | Manufacturers | |
K4S281632B | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL K4S281632B CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S281632B 2M x 16Bit x 4 Banks Synchronous DRAM FEATURES |
Samsung semiconductor |
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K4S281632B-TC10 | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL K4S281632B CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S281632B 2M x 16Bit x 4 Banks Synchronous DRAM FEATURES |
Samsung semiconductor |
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K4S281632B-TC1H | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL K4S281632B CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S281632B 2M x 16Bit x 4 Banks Synchronous DRAM FEATURES |
Samsung semiconductor |
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K4S281632B-TC1L | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL K4S281632B CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S281632B 2M x 16Bit x 4 Banks Synchronous DRAM FEATURES |
Samsung semiconductor |
|
K4S281632B-TC75 | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL K4S281632B CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S281632B 2M x 16Bit x 4 Banks Synchronous DRAM FEATURES |
Samsung semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |