No | Part number | Description ( Function ) | Manufacturers | |
1 | K4S280432I | (K4S28xx32I) JEDEC standard 3.3V power supply LVTTL compatible K4S280432I K4S280832I K4S281632I Synchronous DRAM 128Mb I-die SDRAM Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUN |
Samsung Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to K4S280432I |
Part No | Description ( Function) | Manufacturers | |
K4S280432A | 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL K4S280432A CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S280432A 8M x 4Bit x 4 Banks Synchronous DRAM FEATURES � |
Samsung semiconductor |
|
K4S280432B | 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL K4S280432B CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S280432B 8M x 4Bit x 4 Banks Synchronous DRAM FEATURES � |
Samsung semiconductor |
|
K4S280432C | 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL K4S280432C CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Mar. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Mar. 2000 K4S280432C Revision History Revision 0.0 (March 21, 2000) � |
Samsung semiconductor |
|
K4S280432D | 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL K4S280432D CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S280432D CMOS SDRAM Revision History R |
Samsung semiconductor |
|
K4S280432E | 128Mb E-die SDRAM Specification SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.2 May. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 May. 2003 SDRAM 128Mb E-die (x4, x8, x16) Revision History Revision 1.0 (N |
Samsung semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |