No | Part number | Description ( Function ) | Manufacturers | |
3 | K4S280432E | 128Mb E-die SDRAM Specification SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.2 May. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 May. 2003 SDRAM 128Mb E-die (x4, x8, x16) Revision History Revision 1.0 (Nov. 2002) - First release. CMOS SDRAM Revision 1.1 (Apr. 2003) - x4/x8/x16 Merged spec. Revision |
Samsung semiconductor |
|
2 | K4S280432E-TC75 | 128Mb E-die SDRAM Specification SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.2 May. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 May. 2003 SDRAM 128Mb E-die (x4, x8, x16) Revision History Revision 1.0 (Nov. 2002) - First release. CMOS SDRAM Revision 1.1 (Apr. 2003) - x4/x8/x16 Merged spec. Revision |
Samsung semiconductor |
|
1 | K4S280432E-TL75 | 128Mb E-die SDRAM Specification SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.2 May. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 May. 2003 SDRAM 128Mb E-die (x4, x8, x16) Revision History Revision 1.0 (Nov. 2002) - First release. CMOS SDRAM Revision 1.1 (Apr. 2003) - x4/x8/x16 Merged spec. Revision |
Samsung semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |