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Datasheet K4S161622D Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | K4S161622D | 512K x 16Bit x 2 Banks Synchronous DRAM K4S161622D
512K x 16Bit x 2 Banks Synchronous DRAM
FEATURES
• • • • 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) Al |
Samsung semiconductor |
K4S1616 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
K4S161622D | 512K x 16Bit x 2 Banks Synchronous DRAM |
Samsung semiconductor |
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K4S161622H-TC60 | 16Mb H-die SDRAM Specification |
Samsung semiconductor |
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K4S161622E-TC60 | 1M x 16 SDRAM |
Samsung semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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