No | Part number | Description ( Function ) | Manufacturers | |
2 | K4N26 | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) Photocoupler K4N26 These Photocouplers consist of a Gallium Arsenide Infrared Emitting DIMENSION Diode and a Silicon NPN Phototransistor in a 6-pin package. 7.62 (Unit : mm) 0.25 FEATURES • Switching Time - Typ. 3§Á • Collector-Emitter Voltage : Min.30V • Current Transfer Ratio : Typ.100% (at IF=10mA, VCE=10V) • Electrical Isolation Voltage : AC2500Vrms • UL Reco |
KODENSHI KOREA CORP |
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1 | K4N26323AE-GC | 128Mbit GDDR2 SDRAM K4N26323AE-GC 128M GDDR2 SDRAM 128Mbit GDDR2 SDRAM 1M x 32Bit x 4 Banks GDDR2 SDRAM with Differential Data Strobe and DLL Revision 1.7 January 2003 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.7 (Jan. 2003) K4N26323AE-GC 128M GDDR2 SDRAM Revision History Revision 1.7 (January 23, 2003) - Changed the device name f |
Samsung |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |