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Datasheet K4M513233E Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | K4M513233E | 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA K4M513233E - M(E)C/L/F
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst t | Samsung | data |
2 | K4M513233E-F1H | 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA K4M513233E - M(E)C/L/F
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst t | Samsung | data |
3 | K4M513233E-F1L | 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA K4M513233E - M(E)C/L/F
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst t | Samsung | data |
4 | K4M513233E-F75 | 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA K4M513233E - M(E)C/L/F
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst t | Samsung | data |
5 | K4M513233E-L | 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA K4M513233E - M(E)C/L/F
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst t | Samsung | data |
K4M Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | K4M281633F | 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA K4M281633F - R(B)E/N/G/C/L/F
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. B Samsung data | | |
2 | K4M281633F-C | 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA K4M281633F - R(B)E/N/G/C/L/F
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. B Samsung data | | |
3 | K4M281633F-F1L | 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA K4M281633F - R(B)E/N/G/C/L/F
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. B Samsung data | | |
4 | K4M281633F-G | 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA K4M281633F - R(B)E/N/G/C/L/F
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. B Samsung data | | |
5 | K4M281633F-L | 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA K4M281633F - R(B)E/N/G/C/L/F
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. B Samsung data | | |
6 | K4M281633F-N | 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA K4M281633F - R(B)E/N/G/C/L/F
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. B Samsung data | | |
7 | K4M281633F-RE | 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA K4M281633F - R(B)E/N/G/C/L/F
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. B Samsung data | |
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