No | Part number | Description ( Function ) | Manufacturers | |
1 | K4M511633E-L | 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA K4M511633E - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V or 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • Al |
Samsung |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to K4M511633E-L |
Part No | Description ( Function) | Manufacturers | |
K4M511633C | 8M x 16Bit x 4 Banks Mobile SDRAM K4M511633C - R(B)N/G/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst |
Samsung semiconductor |
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K4M511633E | 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA K4M511633E - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V or 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & F |
Samsung |
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K4M511633E-C | 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA K4M511633E - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V or 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & F |
Samsung |
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K4M511633E-F1H | 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA K4M511633E - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V or 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & F |
Samsung |
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K4M511633E-F1L | 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA K4M511633E - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V or 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & F |
Samsung |
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