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Datasheet K4M28163PF-R Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | K4M28163PF-R | 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA K4M28163PF - R(B)G/F
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequ |
 Samsung |
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| 2 | K4M28163PF-RBGF75 | 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA K4M28163PF - R(B)G/F
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequ |
Samsung |
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| 1 | K4M28163PF-RG | 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA K4M28163PF - R(B)G/F
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequ |
Samsung |
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