No | Part number | Description ( Function ) | Manufacturers | |
1 | K4H561638D-TCB3 | 256Mb D-die DDR Sdram 256Mb Key Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (clock) -. Burst length (2, 4, 8) -. Burst type (se |
Samsung Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to K4H561638D-TCB3 |
Part No | Description ( Function) | Manufacturers | |
K4H561638D-TCA0 | 128Mb DDR SDRAM 128Mb DDR SDRAM DDR SDRAM Specification Version 1.0 - 1 - REV. 1.0 November. 2. 2000 128Mb DDR SDRAM Revision History Version 0 (May, 1998) - First version for internal review Version 0.1(June, 1998) - Added x4 organization Version 0.2(Sep,1998) 1. Added "Issue prcharge comma |
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K4H561638D-TCA2 | 128Mb DDR SDRAM 128Mb DDR SDRAM DDR SDRAM Specification Version 1.0 - 1 - REV. 1.0 November. 2. 2000 128Mb DDR SDRAM Revision History Version 0 (May, 1998) - First version for internal review Version 0.1(June, 1998) - Added x4 organization Version 0.2(Sep,1998) 1. Added "Issue prcharge comma |
Samsung |
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K4H561638D-TCB0 | 128Mb DDR SDRAM 128Mb DDR SDRAM DDR SDRAM Specification Version 1.0 - 1 - REV. 1.0 November. 2. 2000 128Mb DDR SDRAM Revision History Version 0 (May, 1998) - First version for internal review Version 0.1(June, 1998) - Added x4 organization Version 0.2(Sep,1998) 1. Added "Issue prcharge comma |
Samsung |
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ON Semiconductor |
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