No | Part number | Description ( Function ) | Manufacturers | |
11 | K4H511638D | (K4H51xx38D) 512Mb D-die DDR SDRAM Specification K4H510438D K4H510838D K4H511638D DDR SDRAM 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY |
Samsung semiconductor |
|
10 | K4H511638D-LA2 | 512Mb D-die DDR SDRAM Specification 66 TSOP-II DDR SDRAM 512Mb D-die (x8, x16) Preliminary DDR SDRAM 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERW |
Samsung semiconductor |
|
9 | K4H511638D-LB0 | 512Mb D-die DDR SDRAM Specification 66 TSOP-II DDR SDRAM 512Mb D-die (x8, x16) Preliminary DDR SDRAM 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERW |
Samsung semiconductor |
|
8 | K4H511638D-LB3 | 512Mb D-die DDR SDRAM Specification 66 TSOP-II DDR SDRAM 512Mb D-die (x8, x16) Preliminary DDR SDRAM 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERW |
Samsung semiconductor |
|
7 | K4H511638D-LCC | 512Mb D-die DDR SDRAM Specification 66 TSOP-II DDR SDRAM 512Mb D-die (x8, x16) Preliminary DDR SDRAM 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERW |
Samsung semiconductor |
|
6 | K4H511638D-TCA0 | 128Mb DDR SDRAM 128Mb DDR SDRAM DDR SDRAM Specification Version 1.0 - 1 - REV. 1.0 November. 2. 2000 128Mb DDR SDRAM Revision History Version 0 (May, 1998) - First version for internal review Version 0.1(June, 1998) - Added x4 organization Version 0.2(Sep,1998) 1. Added "Issue prcharge command for all banks of the device" as the fourth step of power-up squence. 2. In power down mode timing |
Samsung |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |