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K4F661612E PDF Datasheet

The K4F661612E is (k4f641612e / K4f661612e) 4m X 16bit Cmos DynamIC Ram With. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 K4F661612E
(K4F641612E / K4F661612E) 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

( DataSheet : ) Industrial Temperature K4F661612E, K4F641612E 4M x 16bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor

Samsung semiconductor
Samsung semiconductor
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Recommended search results related to K4F661612E

Part No Description ( Function) Manufacturers PDF
K4F661612B   4M x 16bit CMOS Dynamic RAM with Fast Page Mode

K4F661612B,K4F641612B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), a

Samsung
Samsung
datasheet pdf
K4F661612C   4M x 16bit CMOS Dynamic RAM with Fast Page Mode

K4F661612C, K4F641612C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.),

Samsung
Samsung
datasheet pdf

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