No | Part number | Description ( Function ) | Manufacturers | |
1 | K4F160411D | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode K4F170411D, K4F160411D K4F170412D, K4F160412D CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60), power consump |
Samsung |
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Recommended search results related to K4F160411D |
Part No | Description ( Function) | Manufacturers | |
K4F160412D | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode K4F170411D, K4F160411D K4F170412D, K4F160412D CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply v |
Samsung |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |