No | Part number | Description ( Function ) | Manufacturers | |
1 | K4E640812C | 8M x 8bit CMOS Dynamic RAM with Extended Data Out K4E660812C,K4E640812C CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f |
Samsung |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to K4E640812C |
Part No | Description ( Function) | Manufacturers | |
K4E640812B | 8M x 8bit CMOS Dynamic RAM with Extended Data Out K4E660812B, K4E640812B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K R |
Samsung |
|
K4E640812E | (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out K4E660812E,K4E640812E CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Re |
Samsung semiconductor |
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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ON Semiconductor |
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