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K4E640812C PDF Datasheet

The K4E640812C is 8m X 8bit Cmos DynamIC Ram With Extended Data Out. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 K4E640812C
8M x 8bit CMOS Dynamic RAM with Extended Data Out

K4E660812C,K4E640812C CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f

Samsung
Samsung
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Recommended search results related to K4E640812C

Part No Description ( Function) Manufacturers PDF
K4E640812B   8M x 8bit CMOS Dynamic RAM with Extended Data Out

K4E660812B, K4E640812B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K R

Samsung
Samsung
datasheet pdf
K4E640812E   (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out

K4E660812E,K4E640812E CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Re

Samsung semiconductor
Samsung semiconductor
datasheet pdf

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