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Datasheet K40P81M100SF2 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | K40P81M100SF2 | K40 Sub-Family Freescale Semiconductor Data Sheet: Technical Data
K40 Sub-Family Data Sheet
Supports the following: MK40DN512ZVLK10, MK40DN512ZVMB10
Features • Operating Characteristics
– Voltage range: 1.71 to 3.6 V – Flash write voltage range: 1.71 to 3.6 V – Temperature range (ambient): -40 to 105°C
� |  Freescale Semiconductor | data |
K40 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | K4003 | N-Channel MOSFET, 2SK4003 2SK4003
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS VI)
2SK4003
Chopper Regulator, DC/DC Converter and Motor Drive Applications
６．５±０．２
Unit: mm
１．５±０．２
z Low drain−source ON-resistance z Low leakage current z Enhancement mode
: RDS (ON) = 1.7  Toshiba Semiconductor data | | |
| 2 | K4004-01MR | Power MOSFET, Transistor This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of  Fuji mosfet | | |
| 3 | K4005-01MR | N-Channel MOSFET, 2SK4005-01MR This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of  Fuji Electric data | | |
| 4 | K401 | Photocoupler Photocoupler
K401 • K402 • K404
These Photocouplers consist of two Gallium Arsenide Infrared Emitting Diodes and a Silicon NPN Photo Darlington transistor per a channel. The K401 has one channel in a 4-pin mini-flat SMD package. The K402 has two channels in a 8-pin mini-flat SMD package. The K4  KODENSHI KOREA CORP data | | |
| 5 | K4012 | N-Channel MOSFET, 2SK4012 2SK4012
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK4012
Switching Regulator Applications
Unit: mm
z Low drain−source ON-resistance
: RDS (ON) = 0.33 Ω (typ.)
z High forward transfer admittance
: |Yfs| = 8.5 S (typ.)
z Low leakage current
Toshiba Semiconductor data | | |
| 6 | K4013 | N-Channel MOSFET, 2SK4013
2SK4013
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ)
2SK4013
Switching Regulator Applications
• • • • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = Toshiba Semiconductor data | | |
| 7 | K4017 | N-Channel MOSFET, 2SK4017 2SK4017
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III)
2SK4017
Chopper Regulator, DC-DC Converter and Motor Drive Applications
z 4-V gate drive
z Low drain−source ON-resistance: RDS (ON) = 0.07 Ω (typ.) z High forward transfer admittance: |Yfs| = 6.0 Toshiba Semiconductor data | |
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