No | Part number | Description ( Function ) | Manufacturers | |
1 | K3569 | 600V, 10A, N-Channel MOSFET - 2SK3569 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3569 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.54Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm www.DataSheet4U |
Toshiba Semiconductor |
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Part No | Description ( Function) | Manufacturers | |
2SK3569 | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI) 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3569 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.54 (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) A (VDS = 600 V |
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