No | Part number | Description ( Function ) | Manufacturers | |
4 | K349 | Silicon N-Channel MOSFET |
Hitachi |
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3 | K3491 | MOSFET ( Transistor ) - 2SK3491 Ordering number : ENN6959 Features • Low ON-resistance. • Low Qg. 2SK3491 N-Channel Silicon MOSFET 2SK3491 Ultrahigh-Speed Switching Applications Package Dimensions unit : mm 2083B [2SK3491] 6.5 5.0 2.3 4 0.5 5.5 1.5 7.0 0.85 0.7 0.6 12 3 2.3 2.3 0.8 1.6 7.5 1.2 0.5 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP Package Dimensions unit : mm 2092B [2SK3491] 6.5 |
Sanyo Semicon Device |
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2 | K3497 | MOSFET ( Transistor ) - 2SK3497 2SK3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3497 High Power Amplifier Application Unit: mm High breakdown voltage: VDSS = 180V Complementary to 2SJ618 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS 180 Gate−source voltage VGSS ±12 Drain current DC (Note ) P |
Toshiba |
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1 | K3498 | MOSFET ( Transistor ) - 2SK3498 2SK3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • • • • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) High forward transfer admittance: Yfs = 0.6 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 400 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 |
Toshiba Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |