No | Part number | Description ( Function ) | Manufacturers | |
1 | K3407 | MOSFET ( Transistor ) - 2SK3407 2SK3407 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3407 Switching Regulator Applications Unit: mm · · · · Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) Enhancement-mode: Vth = 2.4~3.4 V (VDS = 10 V, |
Toshiba |
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Recommended search results related to K3407 |
Part No | Description ( Function) | Manufacturers | |
2SK3407 | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3407 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3407 Switching Regulator Applications Unit: mm · · · · Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.) Low leakage current: IDS |
Toshiba Semiconductor |
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CJK3407 | P-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK34 07 P-Channel 30-V(D-S) MOSFET V(BR)DSS -30V RDS(on)MAX 60mΩ@-10 V 87mΩ@-4.5V ID -4.1A SOT-23-3L 1. GATE 2. SOURCE 3. DRAIN D General Description The CJK3407 uses advanced |
JCET |
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42BYGH3407 | Stepper Motor Fax Orders to 650-960-3875 Step Angle 1.8°±5% Insulation Resistant 500V DC 100MO Min Insulation Strength 50Hz 1Minute 500V Min Ambient Temperature -20ºC~+50ºC Temperature Rise 80ºC Max Shaft Radial Play 0.02mm Max Shaft End Play 0.1-0.3mm Stepper Motor HB Stepper Motors |
KySan |
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AM3407 | P-Channel Enhancement Mode MOSFET AM3407 P-Channel Enhancement Mode MOSFET Features • -30V/-4.5A, RDS(ON)=43mΩ(typ.) @ VGS=10V RDS(ON)=60mΩ(typ.) @ VGS=4.5V Pin Description Top View D • • • Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) S G |
AXElite |
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AM3407 | -30V P-CHANNEL ENHANCEMENT MODE MOSFET AiT Semiconductor Inc. www.ait-ic.com AM3407 MOSFET -30V P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM3407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellen |
AiT Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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ON Semiconductor |
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