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Datasheet K3233 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | K3233 | N-Channel MOSFET, 2SK3233 To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations i |  Renesas | data |
K32 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | K320 | N-Channel MOSFET, 2SK320 Hitachi Semiconductor data | | |
| 2 | K3207EC450 | Medium Voltage Thyristor Date:- 15 Nov, 2013 Data Sheet Issue:- 1
Medium Voltage Thyristor Type K3207EC450 to K3207EC520
Development Type No. Kx142EC450-520
Absolute Maximum Ratings
VDRM VDSM VRRM VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Repetitive p  IXYS thyristor | | |
| 3 | K3207EC480 | Medium Voltage Thyristor Date:- 15 Nov, 2013 Data Sheet Issue:- 1
Medium Voltage Thyristor Type K3207EC450 to K3207EC520
Development Type No. Kx142EC450-520
Absolute Maximum Ratings
VDRM VDSM VRRM VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Repetitive p IXYS thyristor | | |
| 4 | K3207EC520 | Medium Voltage Thyristor Date:- 15 Nov, 2013 Data Sheet Issue:- 1
Medium Voltage Thyristor Type K3207EC450 to K3207EC520
Development Type No. Kx142EC450-520
Absolute Maximum Ratings
VDRM VDSM VRRM VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Repetitive p IXYS thyristor | | |
| 5 | K3209 | N-Channel MOSFET, 2SK3209 2SK3209
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-759(Z) Target Specification 1st. Edition December 1998 Features
• Low on-resistance R DS =35mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source
Outline
TO–220FM
D
G
1 2 S
1. Gate 2. Dr Hitachi Semiconductor data | | |
| 6 | K3216-01 | N-Channel MOSFET, 2SK3216-01 2SK3216-01
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MOS-FET
TO-220AB
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
3. Source
Maximum ratings and chara  Fuji Electric data | | |
| 7 | K3228 | N-Channel MOSFET, 2SK3228 2SK3228
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-765A(Z) Target specification 2nd. Edition December 1998 Features
• Low on-resistance R DS(on) =6mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source
Outline
TO–220AB
D
G
1 2 S 3
1. Gate 2. Hitachi Semiconductor data | |
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