No | Part number | Description ( Function ) | Manufacturers | |
1 | K3209 | MOSFET ( Transistor ) - 2SK3209 2SK3209 Silicon N Channel MOS FET High Speed Power Switching ADE-208-759(Z) Target Specification 1st. Edition December 1998 Features • Low on-resistance R DS =35mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 Free Datasheet http://www.Datasheet-PDF.com/ 2SK3209 Absolute |
Hitachi Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to K3209 |
Part No | Description ( Function) | Manufacturers | |
2SK3209 | Silicon N Channel MOS FET High Speed Power Switching 2SK3209 Silicon N Channel MOS FET High Speed Power Switching ADE-208-759(Z) Target Specification 1st. Edition December 1998 Features • Low on-resistance R DS =35mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220FM D G |
Hitachi Semiconductor |
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2SK3209 | Silicon N Channel MOS FET 2SK3209 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 40 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline REJ03G1090-0300 (Previous: ADE-208-759A) Target Specification Rev.3.00 Sep 07, |
Renesas |
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1N3209 | Silicon Rectifier Diodes www.vishay.com 1N3208 Series Vishay Semiconductors Silicon Rectifier Diodes, (Stud Version) 15 A DO-203AB (DO-5) PRODUCT SUMMARY IF(AV) 15 A FEATURES • Low thermal impedance • High case temperature • Excellent reliability • Maximum design flexibility • Can be made |
Vishay |
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1N3209 | 15 Amp Stud-mounted Silicon Rectifier Diodes |
International Rectifier |
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1N3209 | (1N3208 - 1N3211R) Silicon Standard Recovery Diode Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ |
America Semiconductor |
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