|
|
Datasheet K2973 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | K2973 | N-Channel MOSFET, 2SK2973 MITSUBISHI RF POWER MOS FET
2SK2973
DESCRIPTION
2SK2973 is a MOS FET type transistor specifically designed for
VHF/UHF power amplifiers applications.
OUTLINE DRAWING
4.6MAX
FEATURES
• High power gain:Gpe≥13dB @VDD=9.6V,f=450MHz,Pin=17dBm
• High efficiency:55% typ. • Source case type SOT-8 |  Mitsubishi | data |
| 2 | K2973FC600 | Medium Voltage Thyristor
WESTCODE
An IXYS Company
Date:- 23 Feb, 2004 Data Sheet Issue:- 1
Provisional Data
Medium Voltage Thyristor Types K2973FC600 to K2973FC650
Development Type No.: KX063FC600-650
Absolute Maximum Ratings
VDRM VDSM VRRM VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1) N |  IXYS | thyristor |
| 3 | K2973FC620 | Medium Voltage Thyristor
WESTCODE
An IXYS Company
Date:- 23 Feb, 2004 Data Sheet Issue:- 1
Provisional Data
Medium Voltage Thyristor Types K2973FC600 to K2973FC650
Development Type No.: KX063FC600-650
Absolute Maximum Ratings
VDRM VDSM VRRM VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1) N | IXYS | thyristor |
| 4 | K2973FC640 | Medium Voltage Thyristor
WESTCODE
An IXYS Company
Date:- 23 Feb, 2004 Data Sheet Issue:- 1
Provisional Data
Medium Voltage Thyristor Types K2973FC600 to K2973FC650
Development Type No.: KX063FC600-650
Absolute Maximum Ratings
VDRM VDSM VRRM VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1) N | IXYS | thyristor |
| 5 | K2973FC650 | Medium Voltage Thyristor
WESTCODE
An IXYS Company
Date:- 23 Feb, 2004 Data Sheet Issue:- 1
Provisional Data
Medium Voltage Thyristor Types K2973FC600 to K2973FC650
Development Type No.: KX063FC600-650
Absolute Maximum Ratings
VDRM VDSM VRRM VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1) N | IXYS | thyristor |
K29 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | K2900-01 | N-channel MOS-FET > Features
- High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated
2SK2900-01
FAP-IIIB Series
N-channel MOS-FET
60V 14,5mΩ ±45A 60W
> Outline Drawing
> Applications
- Motor Control - General Purpose Power Amplifier - DC-DC converters
> Maximum Ratings  Fuji Electric mosfet | | |
| 2 | K2902-01MR | N-Channel MOSFET, 2SK2902-01MR 2SK2902-01MR
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MOS-FET
TO-220F15
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
2.54
3. Source
Maximum ratings Fuji Electric data | | |
| 3 | K2915 | N-Channel MOSFET, 2SK2915 2SK2915
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2915
Chopper Regulator, DC−DC Converter and Motor Drive Applications
z Low drain−source ON resistance z High forward transfer admittance : RDS (ON) = 0.31 Ω (typ.) : |Yfs| = 15 S (typ.) Unit  Toshiba Semiconductor data | | |
| 4 | K2917 | N-Channel MOSFET, 2SK2917 2SK2917
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2917
Chopper Regulator, DC−DC Converter and Motor Drive Applications
z Low drain–source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.21 Ω (typ.) : |Yfs Toshiba Semiconductor data | | |
| 5 | K2926 | N-Channel MOSFET, 2SK2926 2SK2926(L), 2SK2926(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 0.042Ω typ.
• 4V gate drive devices. • High speed switching
Outline
DPAK–2
D
G
S
44
12 3
12 3
1. Gate 2. Drain 3. Source 4. Drain
ADE-208-535 1st. Edition
2SK2926(L), 2S  Hitachi Semiconductor data | | |
| 6 | K2929 | N-Channel MOSFET, 2SK2929 2SK2929
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-552C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS =0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source
Outline
TO–220AB
D
G
1 2 S 3
1. Gate 2. Drain(Flange 3. Sour Hitachi Semiconductor data | | |
| 7 | K2930 | N-Channel MOSFET, 2SK2930 2SK2930
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-553C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS =0.020 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source
Outline
TO–220AB
D
G
1 2 S 3
1. Gate 2. Drain(Flange 3. Sour Hitachi Semiconductor data | |
| Esta página es del resultado de búsqueda del K2973. Si pulsa el resultado de búsqueda de K2973 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |