No | Part number | Description ( Function ) | Manufacturers | |
1 | K2938 | MOSFET ( Transistor ) - 2SK2938 2SK2938(L),2SK2938(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline ADE-208-561B (Z) 3rd. Edition Jun 1998 LDPAK D 44 G S 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2938(L),2SK2938(S) Absolute Maximum Ratings (Ta = 25 |
Hitachi Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to K2938 |
Part No | Description ( Function) | Manufacturers | |
2SK2938 | Silicon N Channel MOS FET/ High Speed Power Switching 2SK2938(L),2SK2938(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-561B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS =0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D G 1 2 1 |
Hitachi Semiconductor |
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2SK2938L | Silicon N Channel MOS FET/ High Speed Power Switching 2SK2938(L),2SK2938(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-561B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS =0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D G 1 2 1 |
Hitachi Semiconductor |
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2SK2938S | Silicon N Channel MOS FET/ High Speed Power Switching 2SK2938(L),2SK2938(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-561B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS =0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D G 1 2 1 |
Hitachi Semiconductor |
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2N2938 | Transistor Free Datasheet http://www.datasheetlist.com/ |
ETC |
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2SC2938 | POWER TRANSISTORS(10A/400V/100W) A A A |
Mospec Semiconductor |
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