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K2882 PDF Datasheet

The K2882 is MOSFET ( Transistor ) - 2sk2882. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 K2882
MOSFET ( Transistor ) - 2SK2882

2SK2882 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-π-MOSV) 2SK2882 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.08 Ω (typ.) • High forward transfer admittance: |Yfs| = 17 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 150 V) • Enhancement

Toshiba Semiconductor
Toshiba Semiconductor
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Recommended search results related to K2882

Part No Description ( Function) Manufacturers PDF
2SK2882   Silicon N Channel MOS Type Field Effect Transistor

2SK2882 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-π-MOSV) 2SK2882 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.08 Ω (typ.) • High forward transfer admittan

Toshiba Semiconductor
Toshiba Semiconductor
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2SC2882   TRANSISTOR (POWER/ VOLTAGE AMPLIFIER APPLICATIONS)

Toshiba Semiconductor
Toshiba Semiconductor
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2SC2882   Power Amplifier Applications

SMD Type Power Amplifier Applications 2SC2882 Transistors Features Suitable for Driver of 30 to 35 Watts Audio Amplifier Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SA1202 Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Co

Kexin
Kexin
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95001-2882   (95001-xxxx) PHONE CONNECTOR

FEATURES AND SPECIFICATIONS s s s s Modular Jack Electrical Voltage: 125V Current: 1.5A Contact Resistance: 20mΩ max. Dielectric Withstanding Voltage: 1000V Insulation Resistance: 500 MΩ min. Physical Housing: Black polyester, UL 94V-0 Contact: Phosphor Bronze Plating: Post

Molex
Molex
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ADN2882   Low Noise Transimpedance Amplifier

Preliminary Technical Data FEATURES Technology: high performance SiGe Bandwidth: 3.2 GHz minimum Input noise current density: 10 pA√Hz Optical sensitivity: −22 dBm Differential transimpedance: 4000 V/A Power dissipation: 75 mW Differential output swing: 2

Analog Devices
Analog Devices
datasheet pdf

[1]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
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LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

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