No | Part number | Description ( Function ) | Manufacturers | |
3 | K227 | Silicon N-Channel Enhancement MOS FET |
Hitachi |
|
2 | K2275 | MOSFET ( Transistor ) - 2SK2275 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2275 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2275 is N-channel Power MOS Field Effect Transis- tor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) FEATURES • Low On-state Resistance RDS(on) = 2.8 Ω MAX. (VGS = 10 V, ID = 2.0 A) • LOW Ciss Cis |
NEC |
|
1 | K2276 | Silicon N-Channel MOS Power F-MOS FETs 2SK2276 2SK2276 Silicon N-Channel MOS For switching 6.5±0.1 1.8±0.1 2.5±0.1 Unit : mm s Features q Low 5.3±0.1 4.35±0.1 3.0±0.1 ON-resistance RDS(on) switching q High-speed 0.2max. 5.5±0.1 7.3±0.1 0.8max. 9.8±0.1 1.0±0.2 1.0±0.1 0.85±0.1 0.75±0.1 0.5±0.1 0.05 to 0.15 s Absolute Maximum Ratings (Tc = 25˚C) Parameter Drain-Source b |
Panasonic |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |