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K10A60W PDF Datasheet

The K10A60W is Tk10A60w. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 K10A60W
TK10A60W

Preliminary TK10A60W TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) TK10A60W Switching Regulator Applications • Low drain-source on-resistance : RDS (ON) = 0.327 by used to Super Junction Structure : DTMOS (typ.) • Easy to control Gate switching • Enhancement-mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA) 3.2 ± 0.2 10 ± 0.3 A Unit: mm

Toshiba Semiconductor
Toshiba Semiconductor
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Recommended search results related to K10A60W

Part No Description ( Function) Manufacturers PDF
K10A60D   600V, 10A, Silicon N Channel MOSFET, TK10A60D

TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A60D Switching Regulator Applications Unit: mm • • • • Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (

Toshiba
Toshiba
datasheet pdf
TK10A60D   Field Effect Transistor

TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A60D Switching Regulator Applications Unit: mm • • • • Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage curr

Toshiba
Toshiba
datasheet pdf
TK10A60D   Switching Regulator Applications

TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A60D Switching Regulator Applications Unit: mm • • • • Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf
TK10A60E   MOSFETs

TK10A60E MOSFETs Silicon N-Channel MOS (π-MOS) TK10A60E 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) Enhancement mode: V

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf
TK10A60W   MOSFETs

TK10A60W MOSFETs Silicon N-Channel MOS (DTMOS) TK10A60W 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf

[1]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
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This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

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