No | Part number | Description ( Function ) | Manufacturers | |
1 | K10A60W | TK10A60W Preliminary TK10A60W TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) TK10A60W Switching Regulator Applications • Low drain-source on-resistance : RDS (ON) = 0.327 by used to Super Junction Structure : DTMOS (typ.) • Easy to control Gate switching • Enhancement-mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA) 3.2 ± 0.2 10 ± 0.3 A Unit: mm |
Toshiba Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to K10A60W |
Part No | Description ( Function) | Manufacturers | |
K10A60D | 600V, 10A, Silicon N Channel MOSFET, TK10A60D TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A60D Switching Regulator Applications Unit: mm • • • • Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S ( |
Toshiba |
|
TK10A60D | Field Effect Transistor TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A60D Switching Regulator Applications Unit: mm • • • • Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage curr |
Toshiba |
|
TK10A60D | Switching Regulator Applications TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A60D Switching Regulator Applications Unit: mm • • • • Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S ( |
Toshiba Semiconductor |
|
TK10A60E | MOSFETs TK10A60E MOSFETs Silicon N-Channel MOS (π-MOS) TK10A60E 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) Enhancement mode: V |
Toshiba Semiconductor |
|
TK10A60W | MOSFETs TK10A60W MOSFETs Silicon N-Channel MOS (DTMOS) TK10A60W 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement |
Toshiba Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |