No | Part number | Description ( Function ) | Manufacturers | |
12 | JCS4N60 | N-CHANNEL MOSFET R N 沟道增强型场效应晶体管 N-CHANNEL MOSFET JCS4N60 主要参数 MAIN CHARACTERISTICS 封装 Package ID VDSS Rdson (@Vgs=10V) Qg 用途 z 高频开关电源 z 电子镇流器 z UPS 电源 4.0 A 600 V 2.5Ω 27 nC APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS FEATURES z Low gate charge z Low Cr |
Jilin |
|
11 | JCS4N60B | (JCS4N60x) N-CHANNEL MOSFET N 沟道增强型场效应晶体管 N-CHANNEL MOSFET JCS4N60V/R/S/B/C/F 主要参数 MAIN CHARACTERISTICS 封装 Package ID VDSS Rdson (@Vgs=10V) Qg 用途 z 高频开关电源 z 电子镇流器 z UPS 电源 4.0 A 600 V 2.5Ω 27 nC APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS FEATURES z Low gate charge |
Gesar |
|
10 | JCS4N60C | (JCS4N60x) N-CHANNEL MOSFET N 沟道增强型场效应晶体管 N-CHANNEL MOSFET JCS4N60V/R/S/B/C/F 主要参数 MAIN CHARACTERISTICS 封装 Package ID VDSS Rdson (@Vgs=10V) Qg 用途 z 高频开关电源 z 电子镇流器 z UPS 电源 4.0 A 600 V 2.5Ω 27 nC APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS FEATURES z Low gate charge |
Gesar |
|
9 | JCS4N60C | N-CHANNEL MOSFET N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET JCS4N60C 主要参数 MAIN CHARACTERISTICS 封装 Package ID 4.0 A VDSS 600 V Rdson(Vgs=10V) 2.5Ω Qg 9nC 用途 高频开关电源 电子镇流器 LED 电源 APPLICATIONS High frequency switching mode power supply Electronic ballast LED power supply 产品特性 低栅极电荷 低 C |
JILIN SINO-MICROELECTRONICS |
|
8 | JCS4N60CC | N-CHANNEL MOSFET N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET JCS4N60C 主要参数 MAIN CHARACTERISTICS 封装 Package ID 4.0 A VDSS 600 V Rdson(Vgs=10V) 2.5Ω Qg 9nC 用途 高频开关电源 电子镇流器 LED 电源 APPLICATIONS High frequency switching mode power supply Electronic ballast LED power supply 产品特性 低栅极电荷 低 C |
JILIN SINO-MICROELECTRONICS |
|
7 | JCS4N60F | (JCS4N60x) N-CHANNEL MOSFET N 沟道增强型场效应晶体管 N-CHANNEL MOSFET JCS4N60V/R/S/B/C/F 主要参数 MAIN CHARACTERISTICS 封装 Package ID VDSS Rdson (@Vgs=10V) Qg 用途 z 高频开关电源 z 电子镇流器 z UPS 电源 4.0 A 600 V 2.5Ω 27 nC APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS FEATURES z Low gate charge |
Gesar |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |