| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | JANSR2N7399 | 11A/ 100V/ 0.210 Ohm/ Rad Hard/ N-Channel Power MOSFET JANSR2N7399 Formerly FSS130R4 June 1998 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR |
 Intersil Corporation |
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Recommended search results related to JANSR2N7399 |
| Part No | Description ( Function) | Manufacturers | |
| JANSR2N7389 | TRANSISTOR P-CHANNEL(BVdss=-100V/ Rds(on)=0.30ohm/ Id=-6.5A) Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.882A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHF9130 JANSR2N7389 RAD HARD [REF: MIL-PRF-19500/630] P-CHANNEL -100 Volt, 0.30Ω , RAD HARD HEXFET International Rectifier’s P-Channel |
 International Rectifier |
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| JANSR2N7391 | TRANSISTOR N-CHANNEL(BVdss=400V/ Rds(on)=0.20ohm/ Id=22A) Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1224A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHM7360SE JANSR2N7391 [REF:MIL-PRF-195000/TBD] N-CHANNEL SINGLE EVENT EFFECT (SEE) RAD HARD 400 Volt, 0.20 Ω, (SEE) RAD HARD HEXFET In |
International Rectifier |
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| JANSR2N7395 | 8A/ 100V/ 0.230 Ohm/ Rad Hard/ N-Channel Power MOSFET JANSR2N7395 Formerly FSL130R4 June 1998 8A, 100V, 0.230 Ohm, Rad Hard, N-Channel Power MOSFET Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applicat |
Intersil Corporation |
|
| JANSR2N7396 | 5A/ 200V/ 0.460 Ohm/ Rad Hard/ N-Channel Power MOSFET JANSR2N7396 Formerly FSL230R4 June 1998 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applicat |
Intersil Corporation |
|
| JANSR2N7397 | 4A/ 250V/ 0.610 Ohm/ Rad Hard/ N-Channel Power MOSFET JANSR2N7397 Formerly FSL234R4 June 1998 4A, 250V, 0.610 Ohm, Rad Hard, N-Channel Power MOSFET Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applicat |
Intersil Corporation |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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