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J585LS PDF Datasheet

The J585LS is P-channel MOSFET ( Transistor ) - 2sj585ls. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 J585LS
P-Channel MOSFET ( Transistor ) - 2SJ585LS

Ordering number:ENN6412 P-Channel Silicon MOSFET 2SJ585LS Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed switching. · Micaless package facilitating mounting. Package Dimensions unit:mm 2078B [2SJ585LS] 10.0 3.5 7.2 4.5 2.8 3.2 16.1 16.0 0.9 1.2 14.0 3.6 0.75 1 2 3 2.4 0.7 Specifications Absolute Maximu

Sanyo Semicon Device
Sanyo Semicon Device
pdf

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Recommended search results related to J585LS

Part No Description ( Function) Manufacturers PDF
2SJ585LS   Ultrahigh-Speed Switching Applications

Ordering number:ENN6412 P-Channel Silicon MOSFET 2SJ585LS Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed switching. · Micaless package facilitating mounting. Package Dimensions unit:mm 2078B [2SJ585LS] 10.0 3.5 7.2 4.5 2.8 3.2 16.

Sanyo Semicon Device
Sanyo Semicon Device
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CJ5853DC   P-channel MOSFET and Schottky Barrier Diode

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB3×2-08L-B Power Management MOSFETs-Schottky CJ5853DC P-channel MOSFET and Schottky Barrier Diode V(BR)DSS/VR -20V 20V RDS(on)MAX 110mΩ@-4.5V 160mΩ@-2.5V 240mΩ@-1.8V  / ID/IO -2.7A  1A   DFNWB3×2-08L-B C D FEATU

JCET
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CJ5853DCB   P-channel MOSFET and Schottky Barrier Diode

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB3×2-08L-B Power Management MOSFETs-Schottky CJ5853DCB P-channel MOSFET and Schottky Barrier Diode V(BR)DSS/VR -20V 20V RDS(on)MAX 110mΩ@-4.5V 160mΩ@-2.5V 240mΩ@-1.8V  / ID/IO -2.7A  0.5A   DFNWB3×2-08L-B FEATUR

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1N1585   (1N158x) SILICON POWER RECTIFIER

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[1]    

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