No | Part number | Description ( Function ) | Manufacturers | |
7 | J304 | N-Channel JFETs N-Channel JFETs J304/305 Vishay Siliconix PRODUCT SUMMARY Part Number J304 J305 VGS(off) (V) −2 to −6 −0.5 to −3 V(BR)GSS Min (V) −30 −30 gfs Min (mS) 4.5 3 IDSS Min (mA) 5 1 FEATURES D Excellent High Frequency Gain: J304, Gps 11 dB (typ) @ 400 MHz D Very Low Noise: 3.8 dB (typ) @ 400 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation D High Gain: A |
Vishay |
|
6 | J304 | JFET High Frequency Amplifier MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET High Frequency Amplifier N–Channel — Depletion 1 DRAIN 3 GATE 2 SOURCE J304 MAXIMUM RATINGS Rating Symbol Value Drain – Gate Voltage Gate–Source Voltage Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C VDG VGS IG PD – 30 – 30 10 350 2.8 Lead Temperature (1/16″ from Case for 10 Seconds) |
Motorola Semiconductors |
|
5 | J304 | N-Channel RF Amplifier J304 J304 N-Channel RF Amplifier • This device is designed for electronic switching applications such as low ON resistance analog switching. • Sourced from process 50. 1 TO-92 1. Drain 2. Source 3. Gate NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* TC=25°C unless otherwise noted Symbol Parameter VDG Drain-Gate Voltage VGS Gate-Source Voltage IGF Forw |
Fairchild Semiconductor |
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4 | J304 | N-Channel Silicon Junction Field-Effect Transistor B-60 J304, J305 N-Channel Silicon Junction Field-Effect Transistor 01/99 ¥ Mixers ¥ Oscillators ¥ VHF/UHF Amplifiers Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating – 30 V 10 mA 360 mW 3.27 mW/°C At 25°C free air temperature: Static Electrical C |
InterFET |
|
3 | J304 | N-CHANNEL SILICON JUNCTION FET |
New Jersey Semiconductor |
|
2 | J304 | P-Channel MOSFET ( Transistor ) - 2SJ304 2SJ304 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSIV) 2SJ304 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 80 mΩ (typ.) z High forward transfer admittance : |Yfs| = 8.0 S (typ.) z Low leakage current : IDSS = −100 μA (max) (VDS = −60 V) z Enhancement m |
Toshiba |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |