pdf datasheet site - dataSheet39.com

J304 PDF Datasheet

The J304 is N-channel Jfets, N-channel Rf Amplifier. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
7 J304
N-Channel JFETs

N-Channel JFETs J304/305 Vishay Siliconix PRODUCT SUMMARY Part Number J304 J305 VGS(off) (V) −2 to −6 −0.5 to −3 V(BR)GSS Min (V) −30 −30 gfs Min (mS) 4.5 3 IDSS Min (mA) 5 1 FEATURES D Excellent High Frequency Gain: J304, Gps 11 dB (typ) @ 400 MHz D Very Low Noise: 3.8 dB (typ) @ 400 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation D High Gain: A

Vishay
Vishay
pdf
6 J304
JFET High Frequency Amplifier

MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET High Frequency Amplifier N–Channel — Depletion 1 DRAIN 3 GATE 2 SOURCE J304 MAXIMUM RATINGS Rating Symbol Value Drain – Gate Voltage Gate–Source Voltage Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C VDG VGS IG PD – 30 – 30 10 350 2.8 Lead Temperature (1/16″ from Case for 10 Seconds)

Motorola Semiconductors
Motorola Semiconductors
pdf
5 J304
N-Channel RF Amplifier

J304 J304 N-Channel RF Amplifier • This device is designed for electronic switching applications such as low ON resistance analog switching. • Sourced from process 50. 1 TO-92 1. Drain 2. Source 3. Gate NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* TC=25°C unless otherwise noted Symbol Parameter VDG Drain-Gate Voltage VGS Gate-Source Voltage IGF Forw

Fairchild Semiconductor
Fairchild Semiconductor
pdf
4 J304
N-Channel Silicon Junction Field-Effect Transistor

B-60 J304, J305 N-Channel Silicon Junction Field-Effect Transistor 01/99 ¥ Mixers ¥ Oscillators ¥ VHF/UHF Amplifiers Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating – 30 V 10 mA 360 mW 3.27 mW/°C At 25°C free air temperature: Static Electrical C

InterFET
InterFET
pdf
3 J304
N-CHANNEL SILICON JUNCTION FET

New Jersey Semiconductor
New Jersey Semiconductor
pdf
2 J304
P-Channel MOSFET ( Transistor ) - 2SJ304

2SJ304 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSIV) 2SJ304 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 80 mΩ (typ.) z High forward transfer admittance : |Yfs| = 8.0 S (typ.) z Low leakage current : IDSS = −100 μA (max) (VDS = −60 V) z Enhancement m

Toshiba
Toshiba
pdf

[1]    [2]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
pdf

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


Share Link


DataSheet39.com offers a large amount of data sheet, You can free PDF files download.
Our site offers extensive datasheets for various electronic components including semiconductors, resistors, capacitors, connectors and more.


Sitemap Link

Index :     1N    2SC    74H    AD    BC    IRF    

  LM    TD    New    Sitemap    J30



DataSheet39.com     |   2020    |

  Privacy Policy   |   Contact Us