No | Part number | Description ( Function ) | Manufacturers | |
1 | J117 | P-Channel MOSFET ( Transistor ) - 2SJ117 2SJ117 Silicon P-Channel MOS FET ADE-208-1180 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features • • • • High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators. Outline TO-220AB D 1 2 3 1. Gate 2. Drain (Flange) |
Hitachi Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to J117 |
Part No | Description ( Function) | Manufacturers | |
2SJ117 | Silicon P-Channel MOS FET 2SJ117 Silicon P-Channel MOS FET ADE-208-1180 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features • • • • High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching regulator, DC-DC converter and ultraso |
Hitachi Semiconductor |
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HJ117 | PNP EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Mocroelectronics |
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SSM3J117TU | Field-Effect Transistor Silicon P-Channel MOS Type SSM3J117TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J117TU High-Speed Switching Applications • • 4 V drive Low ON-resistance: Ron = 225 mΩ (max) (@VGS = −4 V) Ron = 117 mΩ (max) (@VGS = −10 V) 2.1±0.1 1.7±0.1 0.65±0.05 + |
Toshiba Semiconductor |
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WJ117F | CIT SWITCH WJ117F Distributor: Electro-Stock www.electrostock.com Tel: 630-682-1542 Fax: 630-682-1562 FEATURES: • UL F class rated standard • Low profile and narrow width • High dielectric strength • Creepage distance: >8mm E197851 28.5 x 10.1 x 12.3 mm CONTACT DATA www.DataSheet4 |
CIT Relay |
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02-09-1117 | Pin and Socket Connectors Pin & Socket Connectors .093" Power Connector Housings Specifications Due to the numerous options on this page, pricing is not shown. Call for pricing and availability. These housings accept .093” diameter standard crimp or PC terminals, ordered separately |
Molex |
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Vishay |
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