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Datasheet IXTP3N120 Equivalent ( PDF )

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1 IXTP3N120   (IXTx3N1x0) High Voltage Power MOSFETs

High Voltage Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary Data Sheet VDSS ID25 3A 3A RDS(on) 4.5 Ω 4.0 Ω IXTA/IXTP 3N120 IXTA/IXTP 3N110 1200 V 1100 V Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
IXYS Corporation
IXYS Corporation		 datasheet IXTP3N120 pdf

IXTP3N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
IXTP3N60P

N-Channel Enhancement Mode Avalanche Rated

PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA 3N60P IXTP 3N60P IXTY 3N60P VDSS ID25 RDS(on) = 600 = 3.0 ≤ 2.9 V A Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25° C to 150° C TJ =
IXYS Corporation
IXYS Corporation		 datasheet pdf - IXYS Corporation
IXTP3N50D2

Depletion Mode MOSFET

Depletion Mode MOSFET IXTA3N50D2 IXTP3N50D2 VDSX ID(on) RDS(on) = > ≤ 500V 3A 1.5Ω N-Channel TO-263 AA (IXTA) Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C Maximum Ratings 500 ±20 ±30 125
 IXYS Corporation
IXYS Corporation		 datasheet pdf - IXYS Corporation
IXTP3N60P

Power MOSFET ( Transistor )

PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA 3N60P IXTP 3N60P IXTY 3N60P VDSS ID25 RDS(on) = 600 = 3.0 ≤ 2.9 V A Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25
 IXYS
IXYS		 datasheet pdf - IXYS


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SPS122

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