No | Part number | Description ( Function ) | Manufacturers | |
8 | IRLR120 | (IRLR120 / IRLU120) HEXFET Power MOSFET
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International Rectifier |
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7 | IRLR120 | Power MOSFET ( Transistor ) www.vishay.com IRLR120, IRLU120, SiHLR120, SiHLU120 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 5.0 V 12 3.0 7.1 Single 0.27 D DPAK (TO-252) D IPAK (TO-251) D G GS GD S S N-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRLR120, SiHL |
Vishay |
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6 | IRLR120A | N-CHANNEL MOSFET $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.176Ω (Typ.) IRLR/U120A BVDSS = 100 V RDS(on) = 0.22Ω ID = 8.4 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source |
Fairchild |
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5 | IRLR120N | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7 IRLR120N FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.176Ω (Typ.) BVDSS = 100 V RDS(on) = 0.22Ω ID = 8.4 A D-PAK I-PAK 2 11 3 2 3 Absolute Maximum Ratings |
Fairchild Semiconductor |
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4 | IRLR120N | N-channel power MOSFET / 100V / 10A PD - 91541B IRLR/U120N HEXFET® Power MOSFET l l l l l Surface Mount (IRLR120N) Straight Lead (IRLU120N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 100V G S RDS(on) = 0.185Ω ID = 10A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per sili |
TRF |
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3 | IRLR120N | Power MOSFET ( Transistor ) l Surface Mount (IRLR120N) l Straight Lead (IRLU120N) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |