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IRLR120 PDF Datasheet

The IRLR120 is Power MOSFET ( Transistor ), (irlr120 / Irlu120) Hexfet Power. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
8 IRLR120
(IRLR120 / IRLU120) HEXFET Power MOSFET

International Rectifier
International Rectifier
pdf
7 IRLR120
Power MOSFET ( Transistor )

www.vishay.com IRLR120, IRLU120, SiHLR120, SiHLU120 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 5.0 V 12 3.0 7.1 Single 0.27 D DPAK (TO-252) D IPAK (TO-251) D G GS GD S S N-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRLR120, SiHL

Vishay
Vishay
pdf
6 IRLR120A
N-CHANNEL MOSFET

$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.176Ω (Typ.) IRLR/U120A BVDSS = 100 V RDS(on) = 0.22Ω ID = 8.4 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source

Fairchild
Fairchild
pdf
5 IRLR120N
Power MOSFET ( Transistor )

$GYDQFHG 3RZHU 026)(7 IRLR120N FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.176Ω (Typ.) BVDSS = 100 V RDS(on) = 0.22Ω ID = 8.4 A D-PAK I-PAK 2 11 3 2 3 Absolute Maximum Ratings

Fairchild Semiconductor
Fairchild Semiconductor
pdf
4 IRLR120N
N-channel power MOSFET / 100V / 10A

PD - 91541B IRLR/U120N HEXFET® Power MOSFET l l l l l Surface Mount (IRLR120N) Straight Lead (IRLU120N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 100V G S RDS(on) = 0.185Ω ID = 10A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per sili

TRF
TRF
pdf
3 IRLR120N
Power MOSFET ( Transistor )

l Surface Mount (IRLR120N) l Straight Lead (IRLU120N) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that

International Rectifier
International Rectifier
pdf

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List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
pdf

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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