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Datasheet IRLI630G Equivalent ( PDF ) |
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PD - 9.1236
IRLI630G
HEXFET® Power MOSFET
Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. 4.8mm Logic-Level Gate Drive RDS(ON) Specified at VGS = 4V & 5V Fast Switching Ease of paralleling Description
Third Generation HEXFE |
International Rectifier |
IRLI6 Datasheet ( Hoja de datos ) - resultados coincidentes |
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IRLI640G | Power MOSFET ( Transistor ) |
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IRLI620G | Power MOSFET ( Transistor ) |
International Rectifier |
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IRLI640GPBF | HEXFET Power MOSFET |
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