No | Part number | Description ( Function ) | Manufacturers | |
2 | IRLI530N | HEXFET Power MOSFET PD - 9.1350B PRELIMINARY Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l l IRLI530N HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.10Ω G ID = 12A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing tech |
International Rectifier |
|
1 | IRLI530NPBF | HEXFET Power MOSFET IRLI530NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description l PD - 95635 HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.10Ω G S ID = 12A Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |