|
|
Datasheet IRL640S Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | IRL640S | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7
IRL640S
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.1 |
Fairchild Semiconductor |
|
3 | IRL640S | Power MOSFET ( Transistor ) |
International Rectifier |
|
2 | IRL640S | Power MOSFET ( Transistor ) Power MOSFET
IRL640S, SiHL640S
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC)
200 VGS = 5 V
66
Qgs (nC)
9.0
Qgd (nC)
38
Configuration
Single
0.18
SMD-220 K
D
G
DS G
S N-Channel MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• Surface |
Vishay |
|
1 | IRL640SPBF | Power MOSFET ( Transistor ) PD- 95585
IRL640SPbF
Lead-Free
www.irf.com
1
07/20/04
IRL640SPbF
2
www.irf.com
IRL640SPbF
www.irf.com
3
IRL640SPbF
4
www.irf.com
IRL640SPbF
www.irf.com
5
IRL640SPbF
6
www.irf.com
IRL640SPbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations • Low Stray I |
International Rectifier |
Esta página es del resultado de búsqueda del IRL640S. Si pulsa el resultado de búsqueda de IRL640S se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |