| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | IRL630PBF | HEXFET Power MOSFET PD- 95756 IRL630PbF Lead-Free www.irf.com 1 8/24/04 Free Datasheet http:// / IRL630PbF 2 www.irf.com Free Datasheet http:// / IRL630PbF www.irf.com 3 Free Datasheet http:// / IRL630PbF 4 www.irf.com Free Datasheet http:// / IRL630PbF www.irf.com 5 Free Datasheet http://www.datasheet |
 International Rectifier |
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Recommended search results related to IRL630PBF |
| Part No | Description ( Function) | Manufacturers | |
| IRL630 | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7 IRL630 FEATURES ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower |
 Fairchild Semiconductor |
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| IRL630 | Power MOSFET ( Transistor ) Previous Datasheet Index Next Data Sheet PD -9.1255 IRL630 HEXFET ® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(ON) Specified at V GS = 4V & 5V 150°C Operating Temperature Fast Switching Ease of paralleling Description Third Gener |
International Rectifier |
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| IRL630 | Power MOSFET ( Transistor ) IRL630, SiHL630 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5 V 40 5.5 24 Single D FEATURES 200 V 0.40 • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic Level Gate Drive • RDS(on) Spe |
 Vishay |
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| IRL630A | Advanced Power MOSFET $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): |
Fairchild Semiconductor |
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| IRL630S | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7 IRL630S FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V � |
Fairchild Semiconductor |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
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| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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