| No | Part number | Description ( Function ) | Manufacturers | |
| 9 | IRL630 | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7 IRL630 FEATURES ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.335Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ |
 Fairchild Semiconductor |
|
| 8 | IRL630 | Power MOSFET ( Transistor ) Previous Datasheet Index Next Data Sheet PD -9.1255 IRL630 HEXFET ® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(ON) Specified at V GS = 4V & 5V 150°C Operating Temperature Fast Switching Ease of paralleling Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast sw |
 International Rectifier |
|
| 7 | IRL630 | Power MOSFET ( Transistor ) IRL630, SiHL630 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5 V 40 5.5 24 Single D FEATURES 200 V 0.40 • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 150 °C Operating Temperature • Fast Switching • Ease of Paralle |
 Vishay |
|
| 6 | IRL630A | Advanced Power MOSFET $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.335Ω (Typ.) IRL630A BVDSS = 200 V RDS(on) = 0.4Ω ID = 9 A TO-220 1 2 3 1.Gate 2. Drain 3. |
Fairchild Semiconductor |
|
| 5 | IRL630PBF | HEXFET Power MOSFET PD- 95756 IRL630PbF Lead-Free www.irf.com 1 8/24/04 Free Datasheet http:// / IRL630PbF 2 www.irf.com Free Datasheet http:// / IRL630PbF www.irf.com 3 Free Datasheet http:// / IRL630PbF 4 www.irf.com Free Datasheet http:// / IRL630PbF www.irf.com 5 Free Datasheet http://www.datasheet |
International Rectifier |
|
| 4 | IRL630S | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7 IRL630S FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.335Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt |
Fairchild Semiconductor |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
|||