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Datasheet IRL620 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 8 | IRL620 | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7
IRL620
FEATURES
♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.609Ω ( |
 Fairchild Semiconductor |
 |
| 7 | IRL620 | Power MOSFET ( Transistor ) Power MOSFET
IRL620, SiHL620
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC)
200 VGS = 5.0 V
16
Qgs (nC)
2.7
Qgd (nC)
9.6
Configuration
Single
0.80
TO-220AB
D
S D G
G
S N-Channel MOSFET
FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Le |
 Vishay |
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| 6 | IRL620 | Power MOSFET ( Transistor ) Previous Datasheet
Index
Next Data Sheet
PD -9.1217
IRL620
HEXFET ® Power MOSFET
Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(ON) Specified at V GS = 4V & 5V Fast Switching Ease of paralleling Simple Drive Requirements Description
Third Generation HEXFETs from Inte |
 International Rectifier |
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| 5 | IRL620A | Advanced Power MOSFET $GYDQFHG 3RZHU 026)(7
FEATURES
♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.609Ω (Typ.)
IR |
Fairchild Semiconductor |
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