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Datasheet IRL5602S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRL5602S | HEXFET Power MOSFET PD- 91888
IRL5602S
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated
D
VDSS = -20V
G S
RDS(on) = 0.042W ID = -24A
Description
Fifth Generation HEXFETs from International Rectifier utili |
 IRF |
 |
| 1 | IRL5602SPBF | Power MOSFET ( Transistor ) PD- 95099
IRL5602SPbF
HEXFET® Power MOSFET
l l l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated Lead-Free
D
VDSS = -20V RDS(on) = 0.042Ω
G S
ID = -24A
Description
Fifth Generation HEXFETs from Internation |
 International Rectifier |
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